Sujet : Re: LTSpice model for a SiC MOSFET
De : jl (at) *nospam* glen--canyon.com (john larkin)
Groupes : sci.electronics.designDate : 05. Jun 2025, 15:50:41
Autres entêtes
Organisation : A noiseless patient Spider
Message-ID : <erfb3k1unoeps3q2o2j75143nna3mhk60e@4ax.com>
References : 1 2 3 4 5 6 7 8 9
User-Agent : ForteAgent/8.00.32.1272
On Tue, 27 May 2025 14:16:11 +0100,
liz@poppyrecords.invalid.invalid(Liz Tuddenham) wrote:
Bill Sloman <bill.sloman@ieee.org> wrote:
>
On 27/05/2025 9:09 am, john larkin wrote:
>
[...]
The specs, as far as I can tell, suggest 1KV at 1 ma in and 3.3v at 3
ma out. The required efficiency is then 1%.
Actually 1kV at 10uA in.
>
Good grief! A 10-megohm quarter watt resistor with a zener diode is
the obvious answer.
>
A 3.3v zener will probably leak more than 10uA. Low voltage zeners are
awful.
And he wants 3 mA out... I think.
[...]
Misunderstanding the constraints can lead people to propose
inappropriate solutions.
>
How can anyone misunderstand something they have never been told?
Bill was the confused person.
The problem gets much more interesting with 10 uA in and 99%
efficiency requirement.
A Baxandall isn't going pull microamps at 1 KV.