Sujet : Breakthrough in next generation memory technology
De : alien (at) *nospam* comet.invalid (Jan Panteltje)
Groupes : sci.electronics.designDate : 13. Jun 2024, 03:20:13
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Breakthrough in next-generation memory technology!
https://www.sciencedaily.com/releases/2024/06/240612113338.htmSource:
Pohang University of Science & Technology (POSTECH)
Summary:
Scientists maximize the efficiency of hafnia-based ferroelectric memory devices.
Multi-level ferromagnetic memory on a chip.