Sujet : Re: tiny dc/dc
De : jlArbor.com (at) *nospam* nirgendwo (john larkin)
Groupes : sci.electronics.designDate : 29. Mar 2025, 18:10:12
Autres entêtes
Message-ID : <1f9gujpm2602bijlrhjneg95d75iff083j@4ax.com>
References : 1 2 3 4
User-Agent : ForteAgent/8.00.32.1272
On Sat, 29 Mar 2025 16:30:23 -0000 (UTC), Phil Hobbs
<
pcdhSpamMeSenseless@electrooptical.net> wrote:
john larkin <jl@glen--canyon.com> wrote:
On Fri, 28 Mar 2025 16:49:23 -0400 (EDT), Martin Rid
<martin_riddle@verison.net> wrote:
john larkin <jl@glen--canyon.com> Wrote in message:r
Check out UCC33420. It's a tiny cheap isolated dc/dc converter. It switches at 64 MHz!
Why does it have such poor esd ratings?
The ucc33421 is better, but not 15kv.
Cheers
Right now I dodn't need kilovolts of isolation. I want to make a GaN
totem-pole driver and want a floating power supply for the high side,
but I want very low switching noise for low jitter on the rising edge.
I might try one of these with a bunch of added filtering. It might be
better than some dc/dc that works in the 100 KHz sort of ballpark.
Or it might be much worse.
>
I bet the gain bandwidth of a GaN FET in its linear range at high current
is pretty impressive.
>
Im using SiGe BJTs to speed up the edges of my TDR pulse generators.
Driven from a 500-ps comparator edge, its fast enough to oscillate on the
falling edge if the layout isnt right. Thatll make really entertaining
jitter.
>
Cheers ?
>
Phil Hobbs
One part that I like is the EPC2037, the tiny BGA thing. I think you
have used it too.
Transconductance is about 1.5S and it's on hard by 3 volts on the
gate. Capacitances are absurdly low compared to a silicon mosfet...
reverse transfer is 0.1 pF.
But a little noise on the gate drive will surely jitter the output.
I never had much luck getting bipolars to make fast output edges, but
I haven't tried SiGe.
That tiny EPC thing is rated for 100 volts and can conduct 2 amps!