Sujet : Re: LTSpice model for a SiC MOSFET
De : bill.sloman (at) *nospam* ieee.org (Bill Sloman)
Groupes : sci.electronics.designDate : 26. May 2025, 16:07:36
Autres entêtes
Organisation : A noiseless patient Spider
Message-ID : <101203p$223b4$3@dont-email.me>
References : 1 2 3 4
User-Agent : Mozilla Thunderbird
On 26/05/2025 4:20 am, JM wrote:
On Mon, 19 May 2025 12:23:54 +1000, Bill Sloman <bill.sloman@ieee.org>
wrote:
On 19/05/2025 12:15 am, john larkin wrote:
On Sun, 18 May 2025 18:11:58 +1000, Bill Sloman <bill.sloman@ieee.org>
wrote:
The drain swing is actually 1.67 times the supply voltage, but it does
Where does 1.67 come from?
Integrate a series of half-sine peaks that get to 1.67V and the voltage averages to about 1V.
You can do it as purely mathematical exercise, and I did it years ago, and that's roughly the result I got.
There's a voltage drop across the switching FET that's on and the Baxandall circuit doesn't product perfect half-sine waves, so it hasn't got a lot to do with precise reality, but it's good enough for preliminary design.
If senile dementia hasn't set in too far I could probably do it again.
-- Bill Sloman, Sydney