Sujet : Re: LMG1025
De : pcdhSpamMeSenseless (at) *nospam* electrooptical.net (Phil Hobbs)
Groupes : sci.electronics.designDate : 09. Jul 2025, 01:46:45
Autres entêtes
Organisation : A noiseless patient Spider
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john larkin <
jl@glen--canyon.com> wrote:
On Tue, 8 Jul 2025 18:36:01 -0400, Phil Hobbs
<pcdhSpamMeSenseless@electrooptical.net> wrote:
On 2025-07-07 20:11, john larkin wrote:
It's a TI GaNfet lowside gate driver. Insane specs.
It's a nasty little leadless package. There's an even faster BGA
version.
I wish there was a higher-voltage version, for driving SiC parts.
Yikes, nine bucks in onesies.
That's in the noise floor for the products that we have in mind. But
it will cost a lot more than the fets we will be driving.
What's interesting is that the schematic on the data sheet seems to
show a p-channel GaN fet... on chip!
You can’t make good PFETs in III-V systems, alas, because the hole mobility
is very low even compared with silicon.
Cheers
Phil Hobbs
-- Dr Philip C D Hobbs Principal Consultant ElectroOptical Innovations LLC /Hobbs ElectroOptics Optics, Electro-optics, Photonics, Analog Electronics 
LMG1025
Re: LMG1025